Abstract
Polycrystalline boron nitride films are synthesized by plasma-assisted chemical vapor deposition (PA-CVD). Metal/BN/metal samples are fabricated and electrical characterization are performed for metal (Ni,Cu,Ti)/BN contacts. Ni/BN contact can be regarded as an ohmic property. However, Cu/BN and Ti/BN contacts show Schottky characteristics. For the Ti/BN sample, Schottky barrier height as high as 1 eV is achieved. It is found that the BN films show p-type conduction from the relationship between Schottky barrier height and metal work function. Also fabricated is a Ni/BN/n–Si diode, current–voltage ( I– V) characteristics of which demonstrate a rectification ratio as high as 10 5.
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