Abstract

Method and result of dynamic characterization of a shunt capacitive RF MEMS switch is presented. The measurement system is based on an optical surface profiler, using which the displacement and action time can be obtained directly. The main structure of the RF MEMS switch is consisted of metallic membrane and serpentine support beams. It has very good isolation up to 46dB @19.6GHz. Measurement results show that the whole action time of the fabricated RF MEMS switch is in order of 100mus, and the pull-down time is 20mus, the recover time is about 80mus

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