Abstract
One low-dimensional material with many favorable properties that promise potential future applications is silicene. By modifying the edges, it is possible to create a one-dimensional material from silicene that is silicene nanoribbons. This study deals with SNRs material with a width of 6Si atoms and modified edges by H atoms. In this work, Zn atoms will be doped instead in SNRs, an external electric field. magnitude 0.35 V/Angstrom will act on the system during the research. Density functional theory (DFT) and VASP software will be used to study and simulate the doped structures. The study shows that the band gap in the meta configuration is extended to 0.643 eV, and multi-orbital hybridizations are evident in the energy region from −3eV to −6eV. Research results will suggest future applications in the field of microelectronics.
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