Abstract
We measured the luminescence spectrum of GaAs induced by 1.0 MeV proton bombardment, and found luminescence peaks due to the spontaneous luminescence of electron-hole plasma. Based on the spectral shape analysis, we obtained the carrier density and temperature when radiative recombination occurs. The carrier density is consistent with that obtained from the diffusion analysis of the excited carriers. These results indicate that high-energy ions are a valuable tool for analyzing the diffusion characteristics of carriers in a highly excited region.
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