Study on die-bonding of single emitter high power laser diodes

Abstract

There will be introduced packaging stress and thermal resistance during the packaging process of semiconductor lasers, and if the values of both are too large not only adversely affect the output characteristics of the device but also reduce its lifetime. To reduce the risk, we propose a process method based on bilayer metal theory to improve this situation. The optimal temperature field is determined by a theoretical formulation, and the effectiveness of this method is demonstrated using finite elements and experiments. The experimental results show that different initial temperature of the chips does change the magnitude of packaging stress, the reasonable control of bonding temperature and bonding height can effectively change the amount of heat radiation, and then control the magnitude of packaging stress and thermal resistance, and ultimately improve the packaging quality of the product. The reason for the discrepancy between the experimental results and the theoretical values is attributed to the effect of thermal radiation, too.