Abstract
ABSTRACTGaN layers were grown on a (001) rutile TiO2 substrate by electron cyclotron resonance plasma-excited molecular beam epitaxy. For the first time, c-GaN with a preferential growth orientation was obtained. Based on the results from electron diffraction and X-ray diffraction analysis, we found that c-GaN with the growth direction of [110] was grown on the TiO2 substrate. The formation of c-GaN was also confirmed by cathodoluminescence, in which a luminescence peak was observed at 3.24eV.
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