Abstract
A study on channel deformation in the GaAlAs/GaAs V-channeled substrate inner stripe (VSIS) laser is presented. The deformation of the chemically etched V-channel is achieved by two independent mechanisms, i.e., the mass transport and melt etch increasing the effective channel width, one of the most important parameters to control device characteristics. However, contrary to widely accepted conception, the melt etch plays a relatively minor role in channel deformation, compared to the mass transport. We have also found that both the mass transport and melt etch depend strongly on hardening of sample surface, which in turn depends on the system condition.
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