Abstract
A mild two-step method of black phosphorus (BP) flake thinning was demonstrated in this article. Slight ultraviolet–ozone (UVO) radiation followed by an argon plasma treatment was employed to oxidize mechanically exfoliated BP flakes and remove the surface remains of previous ozone treatment. The annealing process introduced aims to reduce impurities and defects. Low damage and efficient electronic devices were fabricated in terms of controlling the thickness of BP flakes through this method. These results lead to an important step toward the fabrication of high-performance devices based on two-dimensioned materials.
Highlights
Among 2D materials, black phosphorus (BP) exhibits a range of properties, such as a thickness-dependent bandgap [1,2], high carrier mobility [3], and extraordinary thermoelectric properties [4]
We introduce in this work an effective, mild two-step method using black phosphorus (BP) flakes to form uniform and thin BP
BP crystal by Scotch tape,tape, andand folflakes were obtained by mechanical exfoliation a bulk lowing this, they were transferred following this, they were transferreddirectionally directionallytotosource sourceand anddrain drainelectrodes electrodes(Ti/Au (Ti/Au5 nm/50 nm) which was on a nm
Summary
Among 2D materials, black phosphorus (BP) exhibits a range of properties, such as a thickness-dependent bandgap [1,2], high carrier mobility [3], and extraordinary thermoelectric properties [4]. Various reports have shown the exceptional optical properties, optoelectronic properties, and biomedical performance of BP devices [5,6,7,8,9,10], which makes it a potential candidate for next-generation materials. Conductive atomic force microscope anodic oxidation and electron beam sculpting were reported to accomplish nanopatterning and layer-by-layer thinning of BP [13,14]. Thermal oxidization [15,16] and plasma [17,18,19]
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