Abstract
The accurate high-frequency modeling and average power handling capability (APHC) evaluation of doped multilayer graphene nanoribbon (GNR) interconnects are investigated in this paper. Based on the Boltzmann equation, both the normal skin effect (NSE) and anomalous skin effect (ASE) of GNRs in the high-frequency range are analyzed and compared. With the extracted electrical parameters, the APHC of GNR interconnects is predicted in a wide frequency range. The impact of ASE on APHC is illustrated for on-chip interconnect applications. Numerical examples show that the temperature rise will be seriously underestimated if the ASE is ignored in the high-frequency modeling.
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