Abstract
An atmospheric pressure radio-frequency plasma jet that can eject cold plasma has been developed. In this paper, the configuration of this type of plasma jet is illustrated and its discharge characteristics curves are studied with a current and a voltage probe. A thermal couple is used to measure the temperature distribution along the axis of the jet stream. The temperature distribution curve is generated for the He/O2 jet stream at the discharge power of 150 W. This jet can etch the photo-resistant material at an average rate of 100 nm/min on the surface of silicon wafers at a right angle.
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