Abstract
Power losses of 700V 2.7mOmegacm2 SiC-MOSFETs including influences of circuit stray inductances have been investigated with an originally developed circuit power loss simulator. The device parameters of the SiC-MOSFETs for the power loss calculation are extracted from a SiC-IEMOSFET fabricated at AIST PERC. The power losses of three types of chip areas are investigated and compared to power loss of a CoolMOS. The switching loss energies of the SiC-MOSFETs are larger than that of the CoolMOS in the same circuit conditions. The maximum switching frequencies of the SiC-MOSFETs are 1/2 ~ 2/3 times lower than that of the CoolMOS. Based on total circuit power loss calculation results, heatsink volumes for a half bridge type DC-DC converter at 200kHz operation are estimated. In the case of the SiC- MOSFET3(smallest chip size)/SiC-SBD pair, the heatsink volume can be reduced to about 45% compared to the CoolMOS/SiC-SBD pair due to the Tj=200degC operation and the lower circuit power loss.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
