Abstract
Single-phase Zn 1− x Co x O (0.02≤ x≤0.08) dilute magnetic semiconductor is prepared by mechanical milling process. The shift of XRD peaks towards the higher angle and a redshift in the band gap compared to the undoped ZnO ensure the incorporation of Co 2+ ions in the semiconductor host lattice. Pure Zn x Co 1− x O phases show the paramagnetic behavior in the temperature range 80 K≤ T≤300 K. The room temperature volume magnetic susceptibility ( χ v) estimated in case of Zn 0.96Co 0.04O is ∼10 −5 emu/Oe cm 3. The temperature dependence of susceptibility χ v can be fitted well with Curie law confirming the paramagnetic interaction. The observed crystal-field splitting of 3d levels of Co 2+ ions inside Zn 1− x Co x O has been successfully interpreted using Curie law.
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