Study of wake-up and fatigue properties in doped and undoped ferroelectric HfO<inf>2</inf> in conjunction with piezo-response force microscopy analysis

Abstract

This paper reports wake-up and fatigue effects in ferroelectric HfO 2 with and without Y-doping by comparing macroscopic capacitor characteristics with nano-level piezo-response force microscopy (PFM) analysis. Even though initial characteristics are almost the same between with and without Y-doping, endurance characteristics are really different macroscopically, and PFM study microscopically supports the endurance characteristics as well. This fact suggests that the robustness of HfO 2 ferroelectricity should be sensitive to the doping.