Study of V/Q Non-Linearity in Scientific CMOS Sensor

Abstract

Scientific CMOS sensor usually manifests V/Q non-linearity in charge-to-voltage conversion. Starting from the mechanism underlying this non-linearity, we build the V/Q non-linearity model to study the influence of modulation transfer function (MTF) and signal-to-noise ratio (SNR). Meanwhile, simulation verification is carried out. The results show that V/Q non-linearity improves SNR but causes the decrease of MTF of the electronic device. We propose the combination of video response curve with photo response non-uniformity (PRNU) noise curve to locate V/Q non-linearity. The validity of this method is proved by simulation verification and physical experiment. The present study provides reference for design optimization and compensation for non-linearity in scientific CMOS sensor.