Abstract
Thin TiN was grown on Si wafers (100) using a filtered cathodic vacuum arc technique. The films were characterised by their structural and mechanical behaviour. It was found that the properties of the deposited films are strongly dependent on the bias applied to the substrate. An increasing negative substrate bias results in a decrease in film compressive stress from 7·5 to 3·5 GPa and in hardness from 27·5 to 18·5 GPa. X-ray diffraction shows a preferred alignment from the (200) to the (111) direction with increasing negative sub strate bias. Atomic force microscopy results also show increasing surface roughness and grain size.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
