Abstract
First we present an experimental study of the emission of α-HgS (function of temperature, excitation, lifetime measurements) and give the first conclusions. We show in particular that the emission, which is attibuted to bound—bound transitions at very low temperature and to conduction band-acceptor transitions for T77 K, cannot be described by the recombination models generally used. Secondly, we interpret the yellow luminescence in terms of heavily-doped semiconductors, in which the discrete impurity levels are replaced by bands of states. We present a conduction band-to-acceptor band of states transition model in which the impurity density of states is described by the expression p ∞ exp − ( E−Eλ) 2 2γ 2 We show that the application of this model to the yellow emission reveals an acceptor band of states with the characteristics: E A ≅ 85 meV and γ ≅ 25 meV, and two “discrete” donor levels with ∽5 and ∽40 meV binding energy.
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