Abstract
Pieces of n-type silicon with 3.5kΩ cm resistivity have been irradiated by reactor neutrons to 1MeV neutron equivalent fluences of (1, 5 and 10)×1016cm−2. Using light-transmission measurements, the absorption coefficients have been determined for photon energies, Eγ, between 0.62 and 1.30eV for the samples as irradiated and after 15min isochronal annealing with temperatures between 80°C and 330°C. The radiation-induced absorption coefficient, αirr, has been obtained by subtracting the absorption coefficient for non-irradiated silicon. The Eγ-dependence of αirr shows a resonance peak, which is ascribed to the neutral divacancy, V20, sitting on a background, and αirr(Eγ) is fitted by a Breit–Wigner line shape on a parameterized background. It is found that at an annealing temperature of 210∘C the V20 intensity is reduced by a factor 2, and that at the meV level, the position and the width of the fitted Breit–Wigner do not change with irradiation dose and annealing.
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