Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

I.I Popov,N.I Sushentsov,I.A Arkhireev,A.V Moroz,S.A Stepanov,N.S Vashurin,D.E Voronin,S.I Ksenofontov,A.A Gladysheva,D.A Nikitin,S Arakelyan,A Kalachev,A Evlyukhin,A Naumov

doi:10.1051/epjconf/201922001009

Abstract

Experiments were carried out to study the contribution of the phonon wing to the uniform width of exciton states localized at room temperature on surface defects of the crystal lattice of thin single-layer and three-layer films. Technological studies were carried out to reproduce the parameters of a three-layer thin textured Si (P) / Si (B) / ZnO film to create a technology for the production of femtosecond time interval recorders based on the non-Faraday rotation of the polarized vector of the stimulated photon echo. The results of technological methods for studying the physics of the formation of trion states are discussed.

Highlights

Much attention of scientists around the world is paid to the development of original technologies for creating quantum-dimensional structures, promising when creating new nanoelectronic devices and new principles for processing information at room temperature based on them
It is especially important to evaluate the contribution of the interaction of excitons with phonons
It was found that the fraction of the phonon wing in the contour of uniform broadening of the spectral line due to the exciton-phonon interaction reaches 5-10%

Summary

Introduction

Much attention of scientists around the world is paid to the development of original technologies for creating quantum-dimensional structures, promising when creating new nanoelectronic devices and new principles for processing information at room temperature based on them. To obtain reliable information using nanoelectronic devices, it is necessary to ensure technological reproducibility of the resonance medium parameters of these devices. This work provides a block diagram of the implementation of magnetron sputtering technology for thin films.

Results

Conclusion