Study of the thermal mode of a silicon carbide field emission cathode

Abstract

The dependency of the thermal mode of the silicon carbide (6H-SiC) field emission arrays on the integral emission current density is considered. Experimental temperature estimates reaching values of 1100 °C are presented. Computer simulation of the thermal mode accounting for the emission of electrons from a limited area of the apex of the tip, the Joule heating at the tips, and the nonlinear dependence of the thermal conductivity of the material is performed. The possibility of increasing the integral density of the emission current above 10 A·cm−2 is demonstrated.