Abstract
The chemical vapor deposition (CVD) process has been used to synthesize gallium nitride (GaN) nanostructures using Pt -coated n-type Si (100) as the substrate, and NH 3 gas and Ga 2 O 3 powder as the reaction agents. The surface morphologies of the prepared GaN nanostructures obtained by field emission scanning electron microscopy (FE-SEM) show a large number of GaN nanowires and nanorods on the Si substrates. The synthesized nanostructures are hexagonal as determined from XRD analysis and show a turn-on field of 5 v/μm at 10 μA/cm2.
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