Abstract
Commensurate layered tellurides NbGe xTe 2 ( x = 1 3 , 2 5 , 3 7 ) and an incommensurate layered telluride TaSi 0.414Te 2 were examined by scanning tunneling microscopy (STM). The STM images of the commensurate tellurides were simulated by calculating the partial electron density plots and density of states for their TeNb GeTe sandwich layers. In this image simulation, the tip-force induced depression of the surface Te atoms was taken into consideration. The surface of each TeNb GeTe layer consists of isolated and paired Te atoms, and during scanning the isolated Te atoms are depressed more than are the paired Te atoms. Though counterintuitive, the latter causes the isolated Te atoms to contribute more strongly to the STM images than do the paired Te atoms. This finding was used to characterize the incommensurate modulation and the chain faults in TaSi 0.414Te 2 by STM.
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