Abstract
Superconducting MgB 2 films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV 3He + beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB 2 films was detected, apparently as formation of MgO and eventually B 2O 3. The zero resistance critical temperatures T co values were 28 K for MgB 2/Al 2O 3 and 25 K for MgB 2 /C samples. Because of a rather high annealing temperature of 700 °C, we obtained T co=8 K only in the case of MgB 2/Si(111) sample.
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