Abstract
The epitaxial growth of tellurium films by chemical vapor deposition is investigated. It is established that, under thermochemical activation conditions, tellurium films grow from vapor phase in the (10 \(\bar 1\)0) plane, parallel to the (001) muscovite substrate and the (0001) sapphire substrate. It is demonstrated that tellurium films on (001) muscovite substrates are more homogeneous and can be detached from the substrate, which makes them interesting for carrying out experiments on epitaxy of CdTe films. Tellurium films on sapphire are more heterogeneous and mosaic; however, their growth is accompanied by the formation of hexagonal tellurium microtubes with a high aspect ratio: a diameter of ~1–10 μm and a length of ~1–10 mm.
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