Study of the structural, electrokinetic and magnetic characteristics of the Er1-xZrxNiSb semiconductor

V.A Romaka,A Нoryn,P Klyzub,V Krayovskyy,Yu Stadnyk,L Romaka,V Pashkevych

doi:10.15330/pcss.21.4.689-694

V.A Romaka, A Нoryn + Show 5 more

Open Access

https://doi.org/10.15330/pcss.21.4.689-694

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Abstract

Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied. It was suggested that when Zr (4d25s2) atoms were introduced into the structure of the ErNiSb half-Heusler phase by substitution of Er (5d06s2) atoms in 4a position, Zr atoms can also simultaneously occupy the 4c position of Ni (3d84s2) atoms. As a result, in Er1-xZrxNiSb semiconductor, the structural defects of donor nature in position 4a and ones of acceptor nature in position 4c were generated simultaneously. In this case, in the band gap of Er1-xZrxNiSb, the energy states of impurity donor and acceptor bands (donor-acceptor pairs) appear and determine the electrical conductivity mechanism of the semiconductor.

Highlights

RNiSb compounds and corresponding solid solutions (R – rare earth metal) are promising, but not enough studied class of thermosensitive materials with MgAgAs structure type
This experimental result shows that in the crystal structure of the Er1-xZrxNiSb semiconductor, х = 0.005, the changes take place, which generate the structural defects of acceptor nature and additional impurity acceptor level in the band gap. This is indicated by the decrease of the modulation amplitude of the continuous energy bands of Er1-xZrxNiSb at х = 0.005 to value ε1α = 17.5 mеV (Fig. 5, curve 1). This is possible in the case of occupation of the crystallographic position 4c of Ni atoms (3d84s2) by impurity Zr atoms, which generates the structural defects of acceptor nature in the crystal (Zr atom has fewer d-electrons than Ni)
The presented above results indicate the complex nature of including of Zr atoms into the structure of the ErNiSb compound

Summary

Vasyl Stefanyk Precarpathian National University

Study of the Structural, Electrokinetic and Magnetic Characteristics of the Er1-xZrxNiSb Semiconductor. Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х = 0 - 0.10, were studied. In Er1-xZrxNiSb semiconductor, the structural defects of donor nature in position 4a and ones of acceptor nature in position 4c were generated simultaneously. In this case, in the band gap of Er1-xZrxNiSb, the energy states of impurity donor εD2 and acceptor εА1 bands (donor-acceptor pairs) appear and determine the electrical conductivity mechanism of the semiconductor.

Introduction

We planned that the substitution of Er atoms by Zr

Findings

Conclusions