Abstract
The structural parameters of Ga2Te5 crystals grown using the Bridgman method have been studied. X-ray diffaction analysis revealed the crystal structure of Ga2Te5 in the tetragonal phase. In addition, crystalline size, strain, and dislocation density were calculated with the Sherrer model and the Williamson-Hall (W-H) model. The switching effect was achieved for Ga2Te5 crystals. Furthermore, the effect of temperature and light intensity was studied for Ga2Te5 crystals. The results show that temperature and light intensity affect switching characteristics such as threshold current (ith), threshold voltage (Vth), threshold power (Pth), and resistance ratios from a high-resistance OFF state to a low-resistance ON state (ROFF/RON).
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