Abstract
This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By means of combined DC and spectral analysis we demonstrate the following results: (i) the devices demonstrate a time-dependent failure mechanism; (ii) time to failure (TTF) can be described by a Weibull distribution with a shape factor higher than 1, suggesting a wear-out failure; (iii) the devices have an estimated 20-years lifetime for a gate voltage of 7.2V; (iv) TTF is temperature-dependent, with an activation energy of 0.5eV; (v) emission microscopy reveals the presence of hot spots, whose emission originates from yellow luminescence and/or hot electron radiation.
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