Study of the single-event burnout triggering criteria and hardening of the 550 V SOI lateral-IGBT

Abstract

In this paper, we study the single-event burnout (SEB) tolerance of the 550 V SOI Lateral-IGBT (SOI-LIGBT). The TCAD simulations are performed to inspect the SEB triggering criteria. The SEB of SOI-LIBGT is caused by the ionized carriers induced latch-up of the inherent parasitic thyristor. The peak value of base-emitter voltage (Vbe) in the parasitic NPN transistor is used as the critical parameter to inspect whether the SEB occurs. An analytical model is brought up to reveal the failure procedure during SEB and the hardening strategy. The hardening SOI-LIGBT with the shallow p + layer (SPL-LIGBT) is proposed to improve the SEB immunity by reducing peak Vbe. It is verified by both analytical model and TCAD simulations that the SEB threshold voltage (VSEB) can be enhanced to 250 V at the linear energy transfer (LET) of 37 MeV·cm2/g in the blocking state.