Abstract

This article describes the OXRAM cell operation for different areas and temperatures using the Quantum Point Contact (QPC) model. Based on the QPC model the RERAM cell is described by a potential barrier variation using 2 parameters. The systematic extraction of this parameter for experimental I-V curves leads to conclude that the OXRAM cell does not depend on the scaling area cell but the temperature seems to degrade the performance cell above all for RERAM cell with dimension under 100nm. Further the needed energy to form the cells is increasing with the area scaling.

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