Abstract
The structural parameters of individual layers of samples of a Al{sub x}Ga{sub 1-x}As/In{sub y}Ga{sub 1-y}As/GaAs pseudomorphic heterostructure have been determined by double-crystal X-ray diffraction. A relationship of the technological parameters of fabrication of heterostructures with their structural and electrical properties is established. The increase in the mobility of the 2D electron gas in the samples under study, caused by the increase in the growth temperature of the Al{sub x}Ga{sub 1-x}As spacer layer and the decrease in the time of silicon {delta} doping from the two sides of the quantum well, correlates well with the degree of the sample structural quality.
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