Abstract
An explicit formula relating Schottky-diode junction capacitance (C/sub j/) as a function of diode bias (V/sub dc/) and Gaussian doping profile (k) has been curve fitted to a one-dimensional numerical analysis. Two-dimensional physical simulation and the explicit formula have been applied to a Schottky diode with both simulated and analytic results compared against measurement. Incomplete ionization, edge effects, and additional charge created by traps have also been investigated using a physical simulation package, and results are presented for different trap densities. The stated formula has been implemented for a Schottky diode model using a symbolically defined device within the HP-MDS harmonic-balance simulator. This has been used as a building block for a nonlinear transmission-line (NLTL) doubler design with simulated and measured second harmonic-power output being presented. The formula, which is easily implemented in computer-aided design tools, is important for NLTL modeling and design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
