Study of the reaction at Cu/3C–SiC interface

Abstract

We have investigated solid state reaction at Cu/3C–SiC(001) interface in an annealing temperature range between 250°C and 950°C, using soft X-ray emission spectroscopy (SXES) and X-ray diffractometry (XRD). The interface reaction between Cu and 3C–SiC has not occurred for the Cu(180 nm)/3C–SiC specimens annealed at ⩽750°C, and the formation of Cu–silicide is found from SXES analysis for Cu(180 nm)/3C–SiC specimens annealed at 850°C and 950°C. It is clarified that the reaction resultant is easy to be oxidized due to the presence of oxygen. The reaction products for the specimens are inferred to be a Cu–silicide, possibly Cu3Si, by comparing measured Si Kβ spectra with synthesized Si Kβ spectra of SiO2 with that of a Cu–silicide, possibly Cu3Si, which is prepared by solid phase reaction of a Cu(120 nm)/Si(111) specimen and analyzed by XRD.