Study of the Properties of Two-Dimensional MoS2 and WS2 Films Synthesized by Chemical-Vapor Deposition

Abstract

Molybdenum- and tungsten-disulfide films are synthesized by chemical-vapor deposition. The set of optimal synthesis parameters (temperature, time, and amount and ratio of precursors) is established at which MoS2 domains with maximum lateral sizes of up to 250 μm on sapphire and MoS2 and WS2 domains up to 80 μm in size on SiO2 can be grown. Domain intergrowth leads to the formation of homogeneous single-layer MoS2 films. The Raman spectra of the synthesized films contain two characteristic peaks corresponding to the atomic vibrations in MoS2 and WS2. Photoluminescence of the single-layer and bilayer MoS2 films with a maximum intensity of 670 ± 2 nm and of the single-layer WS2 films with a maximum intensity of 630 ± 2 nm is detected. The photoluminescence spectral maps (the dependences of the photoluminescence intensity on the luminescence and excitation-light wavelengths) are measured. According to the measured data, the photoluminescence excitation spectrum of MoS2 has a maximum at 350 ± 5 nm and the photoluminescence excitation spectrum of WS2 has a maximum at 330 ± 5 nm. The I–V characteristics of the synthesized films are photosensitive in the visible spectral range.