Abstract
Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni63 source with an activity of 10 mCi/cm2. The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ~10 nW/cm2 even for a cell with an area of one centimeter, which is rather close to the calculated value.
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