Abstract
The study of photoluminescence (PL) kinetics for strongly heterogeneous materials such as nanostructured scintillator Pb0.30Cd0.70I2 solid solutions was carried out. Fitting the obtained results by Kohlrausch-Williams-Watts exponential function allows us to obtain the effective lifetime and the lifetime distribution for the PL decay. At the same time, fitting by a sum (about several hundreds) of single exponential functions enables us to determine the lifetime distribution associated with different radiative recombination processes characteristic of the investigated novel semiconductor materials. It was found that the radiative recombination of free electrons and holes associated with the deep surface acceptor centers is a fast process. The obtained results open a way to optimize defect structure of the investigated semiconductor materials in order to obtain high-sensitive fast non-cooled radiation detector material for X- and γ-rays suitable for biomedical and industrial imaging applications.
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