Abstract
Nickel-Platinum Silicide (NiPtSi) layers were formed using a Rapid Thermal Process (RTP) furnace. The metal thin films were deposited by RF Magnetron Sputtering using a Ni(Pt) target (97% Ni and 3% Pt) onto a Si (100) substrate. The silicidation of the samples were performed at temperature ranged from 450°C to 900°C. Energy Dispersion Scanning (EDS) and Grazing Incidence X-Ray Diffraction (GIXRD) were used to confirm the composition and phase of the NiPtSi for each rapid thermal process (RTP) temperature. The Scanning Electron Microscopy was also used to evaluate the surface and difference for each temperature. The lower resistivity monosilicide phase is predominant at temperatures lower than 850°C.
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