Abstract
Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy (AMFTPS) and Dual Beam Photoconductivity are sensitive tools for the measurements of shallow and deep defects related absorption in high resistive semiconductors. Measurements were performed on different homoepitaxial boron doped layers in as-grown and passivated states and will be presented. We will study in details and will discuss the origins of changes in the gap levels due to the passivation of boron by hydrogen in diamond.
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