Abstract
In this work, we study the internal quantum efficiency and the lasing threshold of AlGaN/GaN heterostructures designed for UV laser emission. We discuss the effect of carrier diffusion and carrier localization in the optical properties at low and room temperature. The implementation of a graded-index separate confinement heterostructure results in enhanced carrier collection, reducing the lasing threshold. However, this improvement is not correlated with the internal quantum efficiency of the samples.
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