Abstract
This study is concerned with the growth features of multilayer porous silicon with layers of different porosity, obtained by electrochemical etching on an n-type single-crystal silicon (111) wafer with a p+-layer epitaxially deposited onto the surface. The possibility of obtaining a multilayer system of ordered pores of various sizes within a single technological cycle is demonstrated. The differences in the optical characteristics of separate layers of the grown structure are shown.
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