Abstract
To explore the microscopic mechanism of singlet exciton splitting (${\\rm~S}_{1}+{\\rm~S}_{0}\\to~{\\rm~T}_{1}+~{\\rm~T}_{1}$, STT) and luminescence in Rubrene, a phosphorescent material Ir(ppy)$_{3}$ with strong spin-orbit coupling (SOC) and green emission was selected and mixed into Rubrene thin films with different proportions to fabricate a series of luminescent devices. By measuring the magneto-electroluminescence (MEL) and current-luminescence ($I$-$B$) curves of the devices under different temperatures and currents, we found that the MEL profiles of light-emitting devices with different mixing ratios at room temperature show an STT fingerprint characteristic curve of magnetic field modulation. MEL amplitude first increases and then decreases with increased mixing ratio, whereas luminescence intensity increases monotonously. This is different from conventional Rubrene doped devices (such as mCP: $y$%Rubrene) which show STT increases with increasing concentration but with decreasing luminescence . By analyzing the singlet and triplet energy levels and emission spectra of Ir(ppy)$_{3}$ and absorption spectra of Rubrene, it can be seen that aside from Rubrenes molecular spaces influence on the STT process, intersystem crossing (ISC) caused by the strong SOC of Ir(ppy)$_{3}$ and energy transfer processes between the T$_{1}$ exciton of Ir(ppy)$_{3}$ and the S$_{1}$ exciton of Rubrene are also included in the devices. The combined action of these three micro-mechanisms leads complex MEL and luminescence changes in the device, and the devices current density and working temperature also have a good regulatory effect on them. Obviously, this study helps with understanding of the microscopic process and its evolution mechanism based on Rubrene optoelectronic devices.
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