Abstract
Very thin TiO 2 films have been deposited by electron-beam evaporation on Si wafers. X-Ray photoelectron spectroscopy (XPS) was used to investigate the initial stages of TiO 2 growth. Chemical composition and stoichiometry of the reaction products were analyzed, based on the Ti2p, O1s, Si2p core levels, with an energy resolution of 0.8 eV. A homogeneous layer model was established for the quantitative analysis. The result of calculation was found in agreement with the result of measurement.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
