Abstract
Abstract The initial adsorption of nitrogen (by filament-assisted exposure to N 2 ) on the SiC(100)-(2 × 1) surface at ∼ 800–1000°C has been studied using Auger electron spectroscopy and low energy electron diffraction. N adsorbs at low coverage in either a c(2 × 6) or c(4 × 4) structure. At higher coverage, about two-thirds of a monolayer, a (1 × 3)-ordered layer forms and further adsorption is slow. A model is proposed for the (1 × 3)N structure involving rows of SiNSi bridges with every third row missing.
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