Abstract
Abstract ATGSP crystal is a typical polar material. The crystal growth rate, domain structure and some properties in the polar direction (±b, are quite different. The distribution of domain in the crystal has been investigated by decoration method. The parameters such as internal bias field in the different regions of the crystal were measured by hysteresis loop method. It is found that in the fast growth region (along +b axis), the bias field is low, the doping is inhomogeneous and some reverse domains exist in the crystal, while in the slow growth region (along - b, axis), the case is quite the opposite. Taking advantage of these growth characteristics and using directional growth technique, homogeneous doped and single domain crystals have been grown.
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