Abstract
The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their processing. Using a full processing cycle (grinding and chemical polishing) allows to increase the strength of InSb plates by 2 times (from 3.0 to 6.4 kg/mm2). It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher. The contact profilometry method was used to measure the roughness of thin plates, which also passed successive processing steps. It was found that during a full cycle of processing, the roughness of InSb plates decreases (Ra from 0.6 to 0.04 μm), leading to a general smoothing of the surface roughness. The strength and roughness of the (100) InSb and GaAs wafers are compared. It was found that the strength of GaAs cut wafers is 2 times higher than the strength of InSb cut wafers and slightly increases after a full cycle of their processing. It was shown that the roughness of GaAs and InSb plates after a full cycle of surface treatment is significantly reduced: 10 times for InSb due to overall surface leveling and 3 times for GaAs (Rz from 2.4 to 0.8 μm) due to a decrease in the peak component. Conducting a full cycle of processing InSb plates can increase their strength by removing broken layers by sequential operations and reducing the risk of mechanical damage.
Highlights
The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100)
It was found that the strength of the plates depends on their processing
It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher
Summary
Установлено, что при проведении полного цикла обработки шероховатость пластин InSb уменьшается (Ra от 0,6 до 0,04 мкм), приводя к общему выравниванию шероховатости на поверхности. Что шероховатость пластин GaAs и InSb после полного цикла обработки поверхности значительно уменьшается: в 10 раз для InSb за счет общего выравнивания поверхности и в 3 раза для GaAs (Rz от 2,4 до 0,8 мкм) за счет снижения пиковой составляющей. В настоящее время антимонид индия находит применение в полевых транзисторах, обладающих высоким быстродействием и малым потреблением энергии, что является существенным фактором для приборов цифровой техники [2]. В России технология изготовления «epi-ready» пластин антимонида индия практически отсутствует, а ее создание требует углубленного изучения индивидуальных механических свойств этого полупроводникового соединения, существенно отличающегося от других соединений группы АIIIВV. Цель работы — исследование влияния различного вида обработки (резки, шлифовки и полирующего травления) на прочность монокристаллических пластин нелегированного антимонида индия
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