Abstract
Silicon-nitride films with silicon nanoparticles have been prepared at 300 °C by remote plasma-enhanced chemical vapor deposition using mixtures of H 2, Ar and SiH 2Cl 2 and various NH 3 flow rates. The films were characterized by means of Rutherford backscattering spectrometry, Fourier-transform infrared spectroscopy, single wavelength ellipsometry, high-resolution transmission electronic microscopy, atomic force microscopy and photoluminescence measurements. It was found a chemical stability as well as an increase in the photoluminescence signal for those films with the greatest amount of NH 3. The increase in the photoluminescence signal is due to a quantum confinement effect produced by the nanoparticles, which were formed during the film's preparation process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
