Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers

Abstract

ABSTRACT Thin-film transistors (TFTs) of a metal oxide semiconductor ty pically are transparent and have high mobility to be paid attention for back plane of displays. One of the most actively studied fabrication methods of metal oxide semiconductors is the solution processing (sol-gel) method, owing to its low-cost, simple and fast steps that ensure good product uniformity, and applicability to roll-to-roll processing. Our study focused on probing the electronic properties of solution-processed metal oxide TFTs. We have calculated the density of state (DOS) with monochromatic photonic capacitance-voltage (MPCV) measurements. Improvements in device are proved by electronic and photo-electronic methods. Keywords: Metal oxide semiconductor transistors, IGZO, Sol-gel method, self-assembled monolayer, Density of state Oxygen vacancy 1. INTRODUCTION The use of an amorphous oxide semiconductors (AOS), such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), zinc tin oxide (ZTO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO)