Abstract
AgInS 2 sprayed thin films have been deposited on glass SnO 2:F substrates using an aqueous solution which contains silver acetate (AgCH 3CO 2), thiourea (SC(NH 2) 2) and indium chloride (InCl 3) as precursors. The depositions were carried out at the substrate temperature of 420 °C. The concentration ratio in the spray solution of indium and silver elements x = [Ag +]/[In 3+] was equal to 1.3 whereas y = [S 2−]/[In 3+] was varied between 5 and 7. The current–voltage study of SnO 2:F/AgInS 2/Al Shottky diodes as a function of y composition has been carried out. A rectifier effect has been shown and the transport process is mainly governed by the generation-recombination and tunneling effects.
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