Abstract
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects occurring at the interface between hexagonal Boron Nitride (hBN) films and n-type Indium Phosphide (n-InP). The BN films are deposited on InP using plasma enhanced chemical vapor deposition. The measured DLTS spectra shows four discrete peaks labelled ET 1, ET 2, ET 3 and ET 4. The results are compared to those obtained on InP free surface and Metal/Insulator/Semiconductor (MIS) InP structures. The surface and interface characterization is studied by applying the PL technique to the InP(100) free surface and the Au/hBN/InP MIS structure. The minimum values of the surface and interface state density are 8 × 10 10 eV − 1 cm − 2 and 1.3 × 10 10 eV − 1 cm − 2 situated at 0.37 eV and 0.54 eV below the conduction band minimum, respectively. It is shown that the passivation layer reduces drastically the interface state density.
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