Abstract
In synthesis of diamond thin film by HF-CVD, many factors, such as CH 4H 2 ratio, gases pressure, flow rate, pretreatment of substrate surface, substrate temperature, filament temperature, distance between filament and substrate etc., can affect the growth rate of diamond film. Adequate pretreatment of substrate surface, high filament temperature, high CH 4/H 2 ratio (0.1%–2%), small distance between filament and substrate, adequate substrate temperature (800–900°C) and gases pressure (5–15 kpa) are beneficial to the promotion of diamond growth rate.
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