Abstract
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.
Highlights
Semiconductor Si wire-like crystals grown on Si substrates using the catalytic gold droplets have been studied since 1960 as prospective structures for the development of micro- and nano-electronic devices [1]
The growth process proceeds with the inlet flow of reactive gas that consists of Si-containing molecules into the growth chamber [2,3]
This article presents the results of an experimental investigation of the peculiarities of the formation of the arrays of gold islands in the course of high temperature anneals of Si wafers with gold films deposited on their surfaces depending on the conditions of wafer surface preparation and annealing regimes
Summary
Semiconductor Si wire-like crystals grown on Si substrates using the catalytic gold droplets have been studied since 1960 as prospective structures for the development of micro- and nano-electronic devices [1]. This article presents the results of an experimental investigation of the peculiarities of the formation of the arrays of gold islands in the course of high temperature anneals of Si wafers with gold films deposited on their surfaces depending on the conditions of wafer surface preparation and annealing regimes. It follows that through modifying the oxide coverage on the surface of Si substrates, one can control the deposited gold film structure and subsequently, the process of the formation of catalytically active nanoislands for the growth of Si wire-like crystals.
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