Study of the Formation Process of MnBi Thin Films by the Measurement of Electrical Resistivity and X-ray Diffraction

Abstract

MnBi thin films are prepared by a successive deposition of Bi and Mn layers with a subsequent annealing. It is proved that a marked decrease in electrical resistivity measured during the annealineg corresponds to the formation of MnBi compound. Therefore, the measurement of electrical resistivity is useful to monitor the formation of MnBi compound. In addition, it is found that the exposure of the sample to air before annealing disturbs the formation of a good quality film. In this case, a marked decrease in resistivity is no longer observed.